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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC5407 isc website www.iscsemi.cn description high breakdown voltage- : v cbo = 1700v (min) high switching speed wide area of safe operation applications designed for horizontal defle ction output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1700 v v ces collector-emitter voltage 1700 v v ceo collector-emitter voltage 600 v v ebo emitter-base voltage 5 v i c collector current- continuous 15 a i cm collector current- peak 20 a i b b base current- continuous 8 a collector power dissipation @ t c =25 100 p c collector power dissipation @ t a =25 3 w t j junction temperature 150 t stg storage temperature range -55~150
inchange semiconductor isc product specification isc silicon npn power transistor 2SC5407 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce (sat) collector-emitter saturation voltage i c = 7.5a; i b = 1.88a 3.0 v v be (sat) base-emitter saturation voltage i c = 7.5a; i b = 1.88a 1.5 v i cbo collector cutoff current v cb = 1000v; i e = 0 v cb = 1700v; i e = 0 50 1.0 a ma i ebo emitter cutoff current v eb = 5v; i c = 0 50 a h fe dc current gain i c = 7.5a; v ce = 5v 6 14 f t current-gain?bandwidth product i c = 0.5a; v ce = 10v 3 mhz switching times t stg storage time 4.0 s t f fall time i c = 8a, i b1 = 2a; i b2 = -4a 0.3 s isc website www.iscsemi.cn 2 |
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